document number: 81300 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.4, 03-nov-09 1 high power infrared emitting diode, 940 nm, gaalas/gaas vsml3710 vishay semiconductors description vsml3710 is an infrared, 940 nm emitting diode in gaalas/gaas technology with high radiant power, molded in a plcc-2 package for surface mounting (smd). features ? package type: surface mount ? package form: plcc-2 ? dimensions (l x w x h in mm): 3.5 x 2.8 x 1.75 ? peak wavelength: p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 60 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? package matched with ir emitter series vemt3700 ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free reflow soldering ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? find out more about vishays automotive grade product requirements at: www.vishay.com/applications applications ? ir emitter in photointerrupt ers, sensors and reflective sensors ? ir emitter in low space applications ? household appliance ? tactile keyboards note test conditions see table basic characteristics note moq: minimum order quantity 94 8553 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) vsml3710 8 60 940 800 ordering information ordering code packaging remarks package form VSML3710-GS08 tape and reel moq: 7500 pcs, 1500 pcs/reel plcc-2 vsml3710-gs18 tape and reel moq: 8000 pcs, 8000 pcs/reel plcc-2 ** please see document vishay material category policy: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81300 2 rev. 1.4, 03-nov-09 vsml3710 vishay semiconductors high power infrared emitting diode, 940 nm, gaalas/gaas note t amb = 25 c, unless otherwise specified fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature acc . figure 11, j-std-020 t sd 260 c thermal resistance j unction/ambient j-std-051, soldered on pcb r thja 250 k/w 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21343 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 250 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 21344 r thja = 250 k/w t amb - ambient temperature (c) i f - forward current (ma) basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.35 1.6 v i f = 1 a, t p = 100 s v f 2.6 3 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 25 pf radiant intensity i f = 100 ma, t p = 20 ms i e 4820mw/sr i f = 1 a, t p = 100 s i e 60 mw/sr radiant power i f = 100 ma, t p = 20 ms e 35 mw temperature coefficient of e i f = 100 ma tk e - 0.6 %/k angle of half intensity ? 60 deg peak wavelength i f = 100 ma p 940 nm spectral bandwidth i f = 100 ma ? 50 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 20 ma t r 800 ns i f = 1 a t r 500 ns fall time i f = 20 ma t f 800 ns i f = 1 a t f 500 ns virtual source diameter d 0.44 mm
document number: 81300 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.4, 03-nov-09 3 vsml3710 high power infrared emitting diode, 940 nm, gaalas/gaas vishay semiconductors basic characteristics t amb = 25 c, unless ot herwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current fig. 7 - radiant power vs. forward current fig. 8 - relative radiant intens ity/power vs. ambient temperature 0.01 0.1 1 10 1 10 100 1000 10 000 t p - pulse length (ms) 100 95 9985 i f - forward current (ma) dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb < 60 c v f - forward voltage (v) 13600 10 1 10 0 10 2 10 3 10 4 t p = 100 s t p /t = 0.001 0 i f - forward current (ma) 4 3 2 1 0.7 0.8 0.9 1.0 1.1 1.2 0 102030405060708090100 t amb - ambient temperature (c) 16848 i f = 1 ma i f - forward voltage (v) i f - forward current (ma) 15903 10 3 10 1 10 2 10 4 10 0 0.1 1 10 100 i - radiant intensity (mw/sr) e - radiant power (mw) e i f - forward current (ma) 94 8740 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0.8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t amb - ambient temperature (c)
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81300 4 rev. 1.4, 03-nov-09 vsml3710 vishay semiconductors high power infrared emitting diode, 940 nm, gaalas/gaas fig. 9 - relative radiant power vs. wavelength fig. 10 - relative radiant intensit y vs. angular displacement package dimensions in millimeters solder profile fig. 11 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in mois ture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 168 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity leve l 3, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. 890 0 0.25 0.5 0.75 1.0 1.25 - wavelength (nm) 14291 - relative radiant power e rel i f = 100 ma 990 940 0.4 0.2 0 i e, rel - relative radiant intensity 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement 20541 mounting pad layout 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist 3.5 0.2 3 + 0.15 1.75 0.1 0.9 2.8 0.15 ca pin identification 2.2 ? 2.4 technical drawings according to din specifications drawing-no.: 6.541-5067.01-4 issue: 5; 04.11.08 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
document number: 81300 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.4, 03-nov-09 5 vsml3710 high power infrared emitting diode, 940 nm, gaalas/gaas vishay semiconductors tape and reel plcc-2 components are packed in antistatic blister tape (din iec (co) 564) for automatic component insertion. cavities of blister tape are covered with adhesive tape. fig. 12 - blister tape fig. 13 - tape dimensions in mm for plcc-2 missing devices a maximum of 0.5 % of the to tal number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. a maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. fig. 14 - beginning and end of reel the tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. the tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. the least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. fig. 15 - dimens ions of reel-gs08 fig. 16 - dimens ions of reel-gs18 cover tape removal force the removal force lies between 0.1 n and 1.0 n at a removal speed of 5 mm/s. in order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180 with re gard to the feed direction. adhesive tape component cavity blister tape 94 8670 1.85 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8.3 7.7 3.5 3.1 2.2 2.0 0.25 94 8668 de-reeling direction tape leader min. 75 empty compartments > 160 mm 40 empty compartments carrier leader carrier trailer 94 8158 180 178 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8665 identification label: vishay type group tape code production code quantity 321 329 identification 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 14.4 max. 10.4 8.4 120 18857 label: vishay type group tape code production code quantity
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